Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
Identifieur interne : 001A65 ( Chine/Analysis ); précédent : 001A64; suivant : 001A66Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
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Abstract
Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiNx interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiNx interlayer is expected because of the increased intensity of light scattered on the SiNx nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiNx interlayer doubles that without a SiNx interlayer. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN<sub>x</sub> interlayer in n-GaN layers</title><author><name sortKey="Tu, Ru Chin" uniqKey="Tu R">Ru-Chin Tu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310</wicri:regionArea><wicri:noRegion>Taiwan 310</wicri:noRegion></affiliation></author><author><name sortKey="Chuo, Chang Cheng" uniqKey="Chuo C">Chang-Cheng Chuo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310</wicri:regionArea><wicri:noRegion>Taiwan 310</wicri:noRegion></affiliation></author><author><name sortKey="Pan, Shyi Ming" uniqKey="Pan S">Shyi-Ming Pan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310</wicri:regionArea><wicri:noRegion>Taiwan 310</wicri:noRegion></affiliation></author><author><name sortKey="Fan, Yu Mei" uniqKey="Fan Y">Yu-Mei Fan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310</wicri:regionArea><wicri:noRegion>Taiwan 310</wicri:noRegion></affiliation></author><author><name sortKey="Tsai, Ching En" uniqKey="Tsai C">Ching-En Tsai</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310</wicri:regionArea><wicri:noRegion>Taiwan 310</wicri:noRegion></affiliation></author><author><name sortKey="Wang, Te Chung" uniqKey="Wang T">Te-Chung Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310</wicri:regionArea><wicri:noRegion>Taiwan 310</wicri:noRegion></affiliation></author><author><name sortKey="Tun, Chun Ju" uniqKey="Tun C">Chun-Ju Tun</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Optical Sciences, National Central University, Chung-Li 32054, Taiwan</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Institute of Optical Sciences, National Central University, Chung-Li 32054</wicri:regionArea><wicri:noRegion>Chung-Li 32054</wicri:noRegion></affiliation></author><author><name sortKey="Chi, Gou Chung" uniqKey="Chi G">Gou-Chung Chi</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Optical Sciences, National Central University, Chung-Li 32054, Taiwan</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Institute of Optical Sciences, National Central University, Chung-Li 32054</wicri:regionArea><wicri:noRegion>Chung-Li 32054</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Bing Chi" uniqKey="Lee B">Bing-Chi Lee</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China</s1><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050</wicri:regionArea><wicri:noRegion>Taiwan 30050</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Chien Ping" uniqKey="Lee C">Chien-Ping Lee</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China</s1><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050</wicri:regionArea><wicri:noRegion>Taiwan 30050</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0444905</idno><date when="2003-10-27">2003-10-27</date><idno type="stanalyst">PASCAL 03-0444905 AIP</idno><idno type="RBID">Pascal:03-0444905</idno><idno type="wicri:Area/Main/Corpus">00C816</idno><idno type="wicri:Area/Main/Repository">00BE86</idno><idno type="wicri:Area/Chine/Extraction">001A65</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Leakage currents</term><term>Light emitting diodes</term><term>MOCVD coatings</term><term>Quantum well devices</term><term>Silicon compounds</term><term>VPE</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>8535B</term><term>8115G</term><term>8115K</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Diode électroluminescente</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Dispositif puits quantique</term><term>Silicium composé</term><term>Revêtement MOCVD</term><term>Epitaxie phase vapeur</term><term>Courant fuite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiN<sub>x</sub> interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiN<sub>x</sub> interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiN<sub>x</sub> interlayer is expected because of the increased intensity of light scattered on the SiN<sub>x</sub> nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiN<sub>x</sub> interlayer doubles that without a SiN<sub>x</sub> interlayer. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>17</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN<sub>x</sub> interlayer in n-GaN layers</s1></fA08><fA11 i1="01" i2="1"><s1>TU (Ru-Chin)</s1></fA11><fA11 i1="02" i2="1"><s1>CHUO (Chang-Cheng)</s1></fA11><fA11 i1="03" i2="1"><s1>PAN (Shyi-Ming)</s1></fA11><fA11 i1="04" i2="1"><s1>FAN (Yu-Mei)</s1></fA11><fA11 i1="05" i2="1"><s1>TSAI (Ching-En)</s1></fA11><fA11 i1="06" i2="1"><s1>WANG (Te-Chung)</s1></fA11><fA11 i1="07" i2="1"><s1>TUN (Chun-Ju)</s1></fA11><fA11 i1="08" i2="1"><s1>CHI (Gou-Chung)</s1></fA11><fA11 i1="09" i2="1"><s1>LEE (Bing-Chi)</s1></fA11><fA11 i1="10" i2="1"><s1>LEE (Chien-Ping)</s1></fA11><fA14 i1="01"><s1>Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Optical Sciences, National Central University, Chung-Li 32054, Taiwan</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China</s1><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA20><s1>3608-3610</s1></fA20><fA21><s1>2003-10-27</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. 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